DocumentCode :
1921711
Title :
Monte Carlo Simulation of Program and Erase Charge Distributions in NROM(TM) Devices
Author :
Ingrosso, Gianluca ; Selmi, Luca ; Sangiorgi, Enrico
Author_Institution :
DIEGM, University of Udine, Italy
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
187
Lastpage :
190
Keywords :
Analytical models; Channel hot electron injection; Charge carrier processes; Electron traps; Fabrication; Heating; Monte Carlo methods; Nonvolatile memory; Physics; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194901
Filename :
1503831
Link To Document :
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