DocumentCode
1921751
Title
A New Method for Interface State Evaluation in SOI MOSFETs using Drain Current Transients
Author
Ionescu, A.M. ; Rusu, A. ; Chovet, A. ; Cristoloveanu, S.
Author_Institution
University ``POLITEHNICA´´´´ Bucharest, Faculty of Electronics & Telecommunications, Splaiul Independentei, 313, Bucharest, Romania
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
783
Lastpage
786
Abstract
A new technique for the extraction of the interface state density in dual-gate SOI MOSFETs is presented. The method is based on the investigation of drain current transients by deep depletion pulsing of MOS transistors, in the weak inversion region. It is shown that this transient technique stands as a reliable monitor for radiation-induced interface traps.
Keywords
Charge pumps; Current measurement; Equations; Interface states; MOSFETs; Radiation monitoring; Semiconductor thin films; Silicon on insulator technology; Surface charging; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435836
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