DocumentCode :
1921765
Title :
Antimony as Substitute for Arsenic to Eliminate Enhanced Diffusion Effects
Author :
Rücker, H. ; Heinemann, B. ; Barth, R. ; Bolze, D. ; Melnik, V. ; Kürps, R. ; Kruger, D.
Author_Institution :
IHP, Frankfurt, Germany
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
199
Lastpage :
202
Keywords :
Annealing; CMOS process; Doping profiles; Electrical resistance measurement; Epitaxial growth; Fabrication; MOSFETs; Solids; Temperature; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194904
Filename :
1503834
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1921765
