DocumentCode
1921765
Title
Antimony as Substitute for Arsenic to Eliminate Enhanced Diffusion Effects
Author
Rücker, H. ; Heinemann, B. ; Barth, R. ; Bolze, D. ; Melnik, V. ; Kürps, R. ; Kruger, D.
Author_Institution
IHP, Frankfurt, Germany
fYear
2002
fDate
24-26 September 2002
Firstpage
199
Lastpage
202
Keywords
Annealing; CMOS process; Doping profiles; Electrical resistance measurement; Epitaxial growth; Fabrication; MOSFETs; Solids; Temperature; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN
88-900847-8-2
Type
conf
DOI
10.1109/ESSDERC.2002.194904
Filename
1503834
Link To Document