Title :
High-performance a-Si: H TFT for Large-Area AMLCDs
Author :
Chen, Chun-ying ; Kanicki, Jerzy
Author_Institution :
Department of Electrical Engineering and Computer Science, Center for Display Technology and Manufacturing, University of Michigan, Ann Arbor, MI 48109
Abstract :
We have fabricated high performance hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) for large-area active-matrix liquid crystal displays (AMLCDs) from high deposition-rate plasma-enhanced chemical vapor deposition (PECVD) materials. This a-Si:H TFT has a high field-effect mobility (1.45±0.05 cm2/Vs), low threshold voltage (2.0±0.2 V), high ON/OFF-current ratio (of more than 107) and sharp subthreshold slope (0.3±0.03 V/decade). The electrical behavior of these devices have been accurately modeled with a two-dimensional simulator. The effects ofthe density-of-states of a-Si:H and source/drain series resistances have been fully considered in our model, and we have demonstrated a good agreement between our theoretical and experimental a-Si:H TFT data.
Keywords :
Active matrix liquid crystal displays; Amorphous silicon; Chemical vapor deposition; Plasma chemistry; Plasma devices; Plasma displays; Plasma materials processing; Thin film transistors; Threshold voltage; Throughput;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
