• DocumentCode
    1921797
  • Title

    Study of Self Heating Effects on Future SOI Devices Operation

  • Author

    Yachou, Driss ; Gautier, Jacques

  • Author_Institution
    LETI (CEA - Technologies Avancées) DMEL - CENG, BP85X, 38054 Grenoble Cedex 9, France. Fax: (33)76885183
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    787
  • Lastpage
    790
  • Abstract
    In this work we give a thermal analytical model that is suitable for taking into account the lattice temperature in parameters extraction. This thermal model is used to estimate the self heating effects on future SOI devices operation.
  • Keywords
    Analytical models; Heating; Lattices; Parameter extraction; Power transmission lines; Semiconductor films; Silicon; Temperature; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435838
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1921797