• DocumentCode
    1921833
  • Title

    10.4: Differences in deceleration performance of electrons emitted from field emitter arrays with different electrode geometries

  • Author

    Gotoh, Yasuhito ; Sakai, Yoshiki ; Tsuji, Hiroshi ; Ishikawa, Junzo ; Sakai, Shigeki

  • Author_Institution
    Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
  • fYear
    2010
  • fDate
    26-30 July 2010
  • Firstpage
    203
  • Lastpage
    204
  • Abstract
    The performance of the electron deceleration was evaluated for some silicon field emitter arrays (Si:C-FEAs) with different emitter-gate geometries. Although FEAs with lower emitter showed higher extraction voltage, they showed better deceleration performance. As a result, it was shown that FEAs with lower emitter height may be applicable for the low energy electron source.
  • Keywords
    electrodes; field emitter arrays; silicon; Si; electrode geometry; electron deceleration; electron emission; electron source; emitter-gate geometry; field emitter arrays; Electrodes; Electron sources; Field emitter arrays; Geometry; Ion beams; Logic gates; Silicon; beam divergence; deceleration performance; electrode geometry; field emitter array;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
  • Conference_Location
    Palo Alto, CA
  • Print_ISBN
    978-1-4244-7889-7
  • Electronic_ISBN
    978-1-4244-7888-0
  • Type

    conf

  • DOI
    10.1109/IVNC.2010.5563235
  • Filename
    5563235
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1921833