Title :
10.4: Differences in deceleration performance of electrons emitted from field emitter arrays with different electrode geometries
Author :
Gotoh, Yasuhito ; Sakai, Yoshiki ; Tsuji, Hiroshi ; Ishikawa, Junzo ; Sakai, Shigeki
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
Abstract :
The performance of the electron deceleration was evaluated for some silicon field emitter arrays (Si:C-FEAs) with different emitter-gate geometries. Although FEAs with lower emitter showed higher extraction voltage, they showed better deceleration performance. As a result, it was shown that FEAs with lower emitter height may be applicable for the low energy electron source.
Keywords :
electrodes; field emitter arrays; silicon; Si; electrode geometry; electron deceleration; electron emission; electron source; emitter-gate geometry; field emitter arrays; Electrodes; Electron sources; Field emitter arrays; Geometry; Ion beams; Logic gates; Silicon; beam divergence; deceleration performance; electrode geometry; field emitter array;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location :
Palo Alto, CA
Print_ISBN :
978-1-4244-7889-7
Electronic_ISBN :
978-1-4244-7888-0
DOI :
10.1109/IVNC.2010.5563235
