DocumentCode
1921863
Title
On the n+-GaAs/p+-InGaP/n--GaAs High-Barrier Camel-Like Gate Transistor for High-Breakdown, Low-Leakage and High-Temperature Operations
Author
Liu, W.C. ; Yu, K.H. ; Chuang, H.M. ; Lin, K.W. ; Lee, K.M. ; Tsai, S.F.
Author_Institution
Inst. Microelectronics, Dept. E.E., Taiwan
fYear
2002
fDate
24-26 September 2002
Firstpage
215
Lastpage
218
Keywords
Carrier confinement; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; Leakage current; MESFETs; MODFETs; Metal-insulator structures; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN
88-900847-8-2
Type
conf
DOI
10.1109/ESSDERC.2002.194908
Filename
1503838
Link To Document