DocumentCode
1921882
Title
An InGaP/GaAs Resonant-Tunnelling Bipolar Transistor (RTBT) with Multiple Negative-Differential-Resistance (MNDR) Phenomena
Author
Chuang, H.M. ; Lin, K.W. ; Pan, H.J. ; Lee, K.M. ; Liao, X.D. ; Liu, W.C.
Author_Institution
Inst. Microelectronics, Dept. E.E., Taiwan
fYear
2002
fDate
24-26 September 2002
Firstpage
219
Lastpage
222
Keywords
Bipolar transistors; Breakdown voltage; Electrons; Gallium arsenide; Low voltage; Resonant tunneling devices; State estimation; Stationary state; Superlattices; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN
88-900847-8-2
Type
conf
DOI
10.1109/ESSDERC.2002.194909
Filename
1503839
Link To Document