DocumentCode
1921885
Title
10.2: Integration of TFT and VTF-FEA using ion-induced bending
Author
Yoshida, Tomoya ; Nishi, Takashi ; Nagao, Masayoshi ; Shimizu, Takashi ; Kanemaru, Seigo
Author_Institution
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear
2010
fDate
26-30 July 2010
Firstpage
199
Lastpage
200
Abstract
We demonstrated integration of the vertical-thin-film field-emitter-array (VTF-FEA) and thin-film-transistor (TFT). The VTF-FEA was fabricated by ion-induced bending (IIB) technique. And we observed emission control characteristics from the TFT-VTF-FEA. This fabrication process is very simple and requires no specialized equipments. Therefore, our FEA fabrication process has high potential for FEA application requiring control circuit.
Keywords
bending; finite element analysis; thin film transistors; TFT; VTF-FEA; control circuit; ion-induced bending; thin-film-transistor; vertical-thin-film field-emitter-array; Electrodes; Fabrication; Hybrid fiber coaxial cables; Logic gates; Radiation effects; Thin film transistors; Voltage measurement; FEA; TFT; ion beam irradiation; thin film;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location
Palo Alto, CA
Print_ISBN
978-1-4244-7889-7
Electronic_ISBN
978-1-4244-7888-0
Type
conf
DOI
10.1109/IVNC.2010.5563237
Filename
5563237
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