Title :
10.2: Integration of TFT and VTF-FEA using ion-induced bending
Author :
Yoshida, Tomoya ; Nishi, Takashi ; Nagao, Masayoshi ; Shimizu, Takashi ; Kanemaru, Seigo
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
We demonstrated integration of the vertical-thin-film field-emitter-array (VTF-FEA) and thin-film-transistor (TFT). The VTF-FEA was fabricated by ion-induced bending (IIB) technique. And we observed emission control characteristics from the TFT-VTF-FEA. This fabrication process is very simple and requires no specialized equipments. Therefore, our FEA fabrication process has high potential for FEA application requiring control circuit.
Keywords :
bending; finite element analysis; thin film transistors; TFT; VTF-FEA; control circuit; ion-induced bending; thin-film-transistor; vertical-thin-film field-emitter-array; Electrodes; Fabrication; Hybrid fiber coaxial cables; Logic gates; Radiation effects; Thin film transistors; Voltage measurement; FEA; TFT; ion beam irradiation; thin film;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location :
Palo Alto, CA
Print_ISBN :
978-1-4244-7889-7
Electronic_ISBN :
978-1-4244-7888-0
DOI :
10.1109/IVNC.2010.5563237
