• DocumentCode
    1921930
  • Title

    Self Heating in InP DHBT Technology for 40 Gb/s ICs

  • Author

    Giguerre, L. ; Abboun, M. ; Aniel, F. ; Zerounian, N. ; Dubois, A. ; Adde, R. ; Blayac, S. ; Riet, M. ; Konczykowska, A.

  • Author_Institution
    IEF, Paris-South University, Orsay Cedex, France
  • fYear
    2002
  • fDate
    24-26 September 2002
  • Firstpage
    223
  • Lastpage
    226
  • Keywords
    DH-HEMTs; Gallium arsenide; Heating; Indium gallium arsenide; Indium phosphide; Pulse measurements; Semiconductor process modeling; Thermal conductivity; Thermal resistance; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.194910
  • Filename
    1503840
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1921930