• DocumentCode
    1921943
  • Title

    A New Technological Process for Fabrication of InGaAsP/InP Heterostructure Laser using CBE/MOCVD Growth Techniques

  • Author

    Bertone, D. ; Boschis, L. ; Fornuto, G. ; Gastaldi, L. ; Madella, M. ; Meliga, M. ; Stano, A.

  • Author_Institution
    CSELT - Centro Studi e Laboratori Telecomunicazioni, Via G. Reiss Romoli 274 - 10148 Torino ITALY
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    807
  • Lastpage
    810
  • Abstract
    We describe a new technological process which allows to avoid Reactive Ion Etching (RIE) on the laser active layer. Combining this process with the growth uniformity of the Chemical Beam Epitaxy (CBE) we are able to obtain high yield process and good device performances.
  • Keywords
    Chemical lasers; Chemical processes; Chemical technology; Epitaxial growth; Etching; Indium phosphide; Laser beams; MOCVD; Molecular beam epitaxial growth; Optical device fabrication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435842
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1921943