DocumentCode
1921953
Title
Extraction Method for the Impact-Ionization Multiplication Factor in Silicon at Large Operating Temperatures
Author
Gnani, E. ; Reggiani, S. ; Rudan, M. ; Baccarani, G.
Author_Institution
ARCES-DEIS, University of Bologna, Italy
fYear
2002
fDate
24-26 September 2002
Firstpage
227
Lastpage
230
Keywords
Discrete event simulation; Electric variables measurement; Electrons; Impact ionization; Numerical simulation; Predictive models; Semiconductor devices; Silicon; Temperature distribution; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN
88-900847-8-2
Type
conf
DOI
10.1109/ESSDERC.2002.194911
Filename
1503841
Link To Document