Title :
Degradation of AlInAs HEMT Structures Induced by SiO2 Mask Layer Deposition
Author :
Haddab, Y. ; Spicher, J. ; Beck, M.
Author_Institution :
Institut de Micro et Optoélectronique, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
Abstract :
We have studied the influence of SiO2 deposition on the transport properties of AlInAs HEMT layers by means of Hall effect and deep-level transient spectroscopy measurements. We observed that a thermal treatment corresponding to a regrowth after SiO2 deposition induced a degradation of the electron transport properties. The diffusion of a deep level from the SiO2 is the probable cause of this degradation. This deep level is probably oxygen or an oxygen-related defect complex.
Keywords :
Annealing; Electrons; HEMTs; Hall effect; Magnetic field measurement; Optical fiber communication; Performance evaluation; Spectroscopy; Temperature; Thermal degradation;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
