• DocumentCode
    1921988
  • Title

    Electrical Characteristics and Reliability of Ohmic Contacts for InGaAs/InGaAlAs/InP Lasers

  • Author

    Leech, W. ; Reeves, Geoffrey K.

  • Author_Institution
    Telecom Australia Research Laboratories, Clayton, 3168, Victoria, Australia.
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    811
  • Lastpage
    814
  • Abstract
    Ohmic contacts to p-type In1-x GaxAs/InP with an intermediate superlattice region have been examined for use in InGaAs/InGaAlAs/InP lasers. Four metallizations (Pd/Zn/Pd/Au, Pd/Mn/Sb/Pd/Au, Ni/Zn/Ni/Au and Au/Zn/Au) were evaluated in these contacts for the first time. All of the metallizations exhibited a low resistivity, a smooth surface morphology and thermal stability. However, the Pd/Zn/Pd/Au contacts produced the lowest value of specific contact resistance, pc, of 7.5 ×10¿6 ¿ cm2 after annealing at 500°C for 60 s. The Pd/Zn/Pd/Au contacts also maintained the lowest pc of the contact schemes during ageing at 400°C and for periods of ¿ 5 hrs at 500°C.
  • Keywords
    Conductivity; Electric variables; Gold; Indium gallium arsenide; Indium phosphide; Metallization; Ohmic contacts; Superlattices; Surface morphology; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435844
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1921988