DocumentCode
1921993
Title
Fatigue effect on the I -V characteristics of sol-gel derived PZT thin films
Author
Lee, S.C. ; Teowee, G. ; Schrimpf, R.D. ; Birnie, D.P. ; Uhlmann, D.R. ; Galloway, K.F.
Author_Institution
Arizona Univ., Tucson, AZ, USA
fYear
1992
fDate
30 Aug-2 Sep 1992
Firstpage
240
Lastpage
243
Abstract
The effect of fatigue on sol-gel-derived PZT (lead zirconate titanate) thin films were analyzed using the I -V measurement method. Under bipolar stress, polarization reduction was correlated with a decrease in the switching current and an increase in the leakage current. Neither a significant decrease in the polarization nor an increase in the leakage current was observed under unipolar stress. The fatigue effects are explained by an increase in the space-charge regions near the electrodes or oxygen-deficient dendrite growth. A static I-V measurement method for ferroelectric thin films was developed to distinguish the leakage current from the switching current. The initial polarization state and the exponential decay behavior of the switching current were considered in this method
Keywords
dielectric polarisation; ferroelectric materials; ferroelectric switching; ferroelectric thin films; lead compounds; space charge; I-V characteristics; PZT; PbZrO3TiO3; bipolar stress; exponential decay; fatigue; initial polarization state; leakage current; oxygen-deficient dendrite growth; polarization reduction; sol-gel derived PZT thin films; space-charge regions; switching current; Current measurement; Fatigue; Ferroelectric materials; Hysteresis; Leakage current; Polarization; Resistors; Switched capacitor circuits; Switching circuits; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location
Greenville, SC
Print_ISBN
0-7803-0465-9
Type
conf
DOI
10.1109/ISAF.1992.300674
Filename
300674
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