Title :
Evaluation of Interface Trap Density in a SiGe/Si Heterostructure Using a Charge Pumping Technique and Correlation Between the Trap Density and Low Frequency Noise in SiGe-Channel pMOSFETs
Author :
Tsuchiya, Toshiaki ; Imada, Yuji ; Murota, Junichi
Author_Institution :
Shimane University, Japan
fDate :
24-26 September 2002
Keywords :
Charge pumps; Current measurement; Density measurement; Frequency measurement; Germanium silicon alloys; Low-frequency noise; MOSFETs; Noise measurement; Pulse measurements; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194914
