DocumentCode
1922047
Title
Hot Electron Degradation of the DC and Microwave Performance of InAlAs/InGaAs/InP HEMTs
Author
Menozzi, R. ; Borgarino, M. ; Baeyeans, Y. ; Van Hove, M. ; Fantini, F.
Author_Institution
Dipartimento di Ingegneria dell´´Informazione, Universitá di Parma, Viale delle Scienze, 43100 Parma, Italy
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
1009
Lastpage
1012
Abstract
This work for the first time describes the results of hot electron stress experiments performed on InAlAs/InGaAs/InP HEMTs. Both DC and RF device degradation have been studied. The main effect observed is a reduction of the DC transconductance at high gate bias; at RF this results in a decrease of current and power gain, hence of the device cutoff frequencies.
Keywords
Degradation; Electrons; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Microwave devices; Radio frequency; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5435846
Link To Document