• DocumentCode
    1922108
  • Title

    Complementarity of Drain Current Transient Spectroscopy (DCTS) and G.R. Noise Analysis to Detect Traps in HEMTs

  • Author

    Saysset, N. ; Labat, N. ; Touboul, Antoine ; Danto, Y. ; Dumas, J.M.

  • Author_Institution
    Laboratoire IXL, URA 846-CNRS - Université Bordeaux I, 351 Cours de la Libération, 33405 TALENCE, France
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    1005
  • Lastpage
    1008
  • Abstract
    This work deals with the performances of two electrical techniques to characterize deep levels in HEMTs. G-R noise analysis is a well-known method and its efficiency is now proved, whereas drain current transient spectroscopy provides information about the location of traps in the structure. Experimental results establish the complementarity of these two techniques.
  • Keywords
    Discrete cosine transforms; Electron traps; HEMTs; MODFETs; Noise figure; Noise level; Noise measurement; Spectroscopy; Temperature distribution; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5435849
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1922108