Title :
Influence of the Ge-concentration and RTA on the device performance of strained Si/SiGe pMOS devices
Author :
Collaert, Nadine ; Verheyen, P. ; Meyer, K.D. ; Loo, Roger ; Caymax, M.
Author_Institution :
IMEC, Heverlee, Belgium
fDate :
24-26 September 2002
Keywords :
CMOS technology; Epitaxial growth; Etching; Fabrication; Germanium alloys; Germanium silicon alloys; MOS devices; Photonic band gap; Rapid thermal annealing; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194920
