• DocumentCode
    1922161
  • Title

    Influence of the Ge-concentration and RTA on the device performance of strained Si/SiGe pMOS devices

  • Author

    Collaert, Nadine ; Verheyen, P. ; Meyer, K.D. ; Loo, Roger ; Caymax, M.

  • Author_Institution
    IMEC, Heverlee, Belgium
  • fYear
    2002
  • fDate
    24-26 September 2002
  • Firstpage
    163
  • Lastpage
    266
  • Keywords
    CMOS technology; Epitaxial growth; Etching; Fabrication; Germanium alloys; Germanium silicon alloys; MOS devices; Photonic band gap; Rapid thermal annealing; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.194920
  • Filename
    1503850
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1922161