DocumentCode
1922171
Title
Use of Oxynitride Dielectric to Maximise the Growth Rate of Selective Epitaxial Base Layer in a Self-Aligned Double-Polysilicon SiGe Bipolar Transistors
Author
Ackaert, J. ; Chevalier, P. ; Lohéac, J.L. ; Ziad, H. ; Backer, E. De ; Tack, M.
Author_Institution
Alcatel Microelectronics, Oudenaarde, Belgium
fYear
2002
fDate
24-26 September 2002
Firstpage
267
Lastpage
270
Keywords
BiCMOS integrated circuits; Bipolar transistors; Costs; Dielectrics; Epitaxial growth; Epitaxial layers; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN
88-900847-8-2
Type
conf
DOI
10.1109/ESSDERC.2002.194921
Filename
1503851
Link To Document