DocumentCode :
1922257
Title :
Dephasing of Bloch oscillations due to carrier-carrier scattering: coherent versus incoherent scatterers
Author :
Wolter, F. ; Martini, R. ; Tolk, S. ; Grahn, H.T. ; Hey, R. ; Haring Bolivar, P. ; Kurz, H.
Author_Institution :
Tech. Hochschule Aachen, Germany
fYear :
1998
fDate :
8-8 May 1998
Firstpage :
56
Lastpage :
57
Abstract :
Summary form only given.The practical application of Bloch oscillations in semiconductor superlattices as THz emitters is hampered by the low emission power and the rapid dephasing of the coherent signal. At higher excitation densities the quadratic scaling of the THz emission power saturates due to the stronger dephasing of the signal. We adopt an approach previously employed for the investigation of the dephasing of interband dynamics in four wave mixing to study the dephasing of the intraband dynamics responsible for the THz emission. We demonstrate that for higher carrier densities the dominant dephasing process at low temperatures is carrier-carrier scattering. The experiments are performed on a superlattice consisting of 9.7-nm GaAs wells separated by 1.7-nm AlGaAs barriers.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high-frequency effects; semiconductor quantum wells; semiconductor superlattices; 1.7 nm; 9.7 nm; AlGaAs barriers; Bloch oscillations dephasing; GaAs wells; GaAs-AlGaAs; carrier densities; carrier-carrier scattering; coherent scatterers; coherent signal; excitation densities; four wave mixing; incoherent scatterers; interband dynamics; low emission power; quadratic scaling; rapid dephasing; semiconductor superlattice THz emitters; superlattice; Charge carrier density; Damping; Delay effects; Electrons; Gallium arsenide; Linear regression; Particle scattering; Plasma displays; Semiconductor superlattices; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-541-2
Type :
conf
DOI :
10.1109/IQEC.1998.680120
Filename :
680120
Link To Document :
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