• DocumentCode
    1922260
  • Title

    Advantages of the Methodology Using DOE and Simulation for Optimising Advanced Technologies - Application to a Real 0.35 μM PMOS Architecture

  • Author

    Carval, G. Le ; Poncet, D. ; Guegan, G. ; Caire, J.-P.

  • Author_Institution
    LETI (CEA-Technologies Avancées) DMEL-CENG BP85X, 38054 Grenoble Cedex 9, France
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    841
  • Lastpage
    844
  • Abstract
    This paper shows that a rigorous methodology, using DoE and calibrated simulators, in order to optimise complex technologies can lead to a real improvement of the optimal point found by a classical go and fro experimental approach; the two approaches are compared in terms of performances and in terms of available information to estimate the manufacturability of a process.
  • Keywords
    Application software; Design optimization; Implants; Manufacturing processes; Optimization methods; Predictive models; Software performance; Software tools; US Department of Energy; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435854