DocumentCode
1922260
Title
Advantages of the Methodology Using DOE and Simulation for Optimising Advanced Technologies - Application to a Real 0.35 μM PMOS Architecture
Author
Carval, G. Le ; Poncet, D. ; Guegan, G. ; Caire, J.-P.
Author_Institution
LETI (CEA-Technologies Avancées) DMEL-CENG BP85X, 38054 Grenoble Cedex 9, France
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
841
Lastpage
844
Abstract
This paper shows that a rigorous methodology, using DoE and calibrated simulators, in order to optimise complex technologies can lead to a real improvement of the optimal point found by a classical go and fro experimental approach; the two approaches are compared in terms of performances and in terms of available information to estimate the manufacturability of a process.
Keywords
Application software; Design optimization; Implants; Manufacturing processes; Optimization methods; Predictive models; Software performance; Software tools; US Department of Energy; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435854
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