DocumentCode
1922275
Title
Reactive coevaporation synthesis and characterization of SrTiO3-BaTiO3 thin films
Author
Yamaguchi, Hiromu ; Matsubara, Shogo ; Takemur, Koichi ; Miyasaka, Yuto
Author_Institution
NEC Corp., Kawasaki, Japan
fYear
1992
fDate
30 Aug-2 Sep 1992
Firstpage
285
Lastpage
288
Abstract
(BaxSr1-x)TiO3 thin films were prepared by reactive coevaporation on Pd-coated sapphire substrates. Ba and Sr metals were evaporated by K-cells and Ti metal was evaporated by an E-gun. Films of 80- to 90-nm thickness were deposited at 500°C and were crystallized in perovskite phase for the whole Ba content (x) range. The leakage current density of as-deposited films was fairly large and could be reduced by rapid thermal annealing ∈r decreased with increasing (Ba+Sr)/Ti atomic ratio. The leakage current characteristics were improved by increasing the (Ba+Sr)/Ti atomic ratio
Keywords
annealing; barium compounds; chemical vapour deposition; ferroelectric materials; ferroelectric thin films; rapid thermal processing; strontium compounds; (BaxSr1-x)TiO3; 500 degC; 80 to 90 nm; Al2O3; Pd; Pd-coated sapphire substrates; SrTiO3-BaTiO3 thin films; as-deposited films; atomic ratio; leakage current density; perovskite phase; rapid thermal annealing; reactive coevaporation; Capacitance measurement; Capacitors; Electric variables measurement; Frequency measurement; Impedance measurement; Lattices; Strontium; Surface impedance; Temperature; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location
Greenville, SC
Print_ISBN
0-7803-0465-9
Type
conf
DOI
10.1109/ISAF.1992.300688
Filename
300688
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