Title :
Reactive coevaporation synthesis and characterization of SrTiO3-BaTiO3 thin films
Author :
Yamaguchi, Hiromu ; Matsubara, Shogo ; Takemur, Koichi ; Miyasaka, Yuto
Author_Institution :
NEC Corp., Kawasaki, Japan
fDate :
30 Aug-2 Sep 1992
Abstract :
(BaxSr1-x)TiO3 thin films were prepared by reactive coevaporation on Pd-coated sapphire substrates. Ba and Sr metals were evaporated by K-cells and Ti metal was evaporated by an E-gun. Films of 80- to 90-nm thickness were deposited at 500°C and were crystallized in perovskite phase for the whole Ba content (x) range. The leakage current density of as-deposited films was fairly large and could be reduced by rapid thermal annealing ∈r decreased with increasing (Ba+Sr)/Ti atomic ratio. The leakage current characteristics were improved by increasing the (Ba+Sr)/Ti atomic ratio
Keywords :
annealing; barium compounds; chemical vapour deposition; ferroelectric materials; ferroelectric thin films; rapid thermal processing; strontium compounds; (BaxSr1-x)TiO3; 500 degC; 80 to 90 nm; Al2O3; Pd; Pd-coated sapphire substrates; SrTiO3-BaTiO3 thin films; as-deposited films; atomic ratio; leakage current density; perovskite phase; rapid thermal annealing; reactive coevaporation; Capacitance measurement; Capacitors; Electric variables measurement; Frequency measurement; Impedance measurement; Lattices; Strontium; Surface impedance; Temperature; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
DOI :
10.1109/ISAF.1992.300688
