Title :
Cost Effective Implementation of a 90 V RESURF P-type Drain Extended MOS in a 0.35 um Based Smart Power Technology
Author :
Bakeroot, B. ; Vermandel, M. ; Moens, P. ; Doutreloigne, J. ; Bolognesi, D.
Author_Institution :
ELIS-TFCG/IMEC University of Gent, Belgium
fDate :
24-26 September 2002
Keywords :
Automotive applications; Batteries; CMOS technology; Costs; Design methodology; Doping; Electric breakdown; Implants; MOSFETs; Microelectronics;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194926
