Cost Effective Implementation of a 90 V RESURF P-type Drain Extended MOS in a 0.35 um Based Smart Power Technology

Author

Bakeroot, B. ; Vermandel, M. ; Moens, P. ; Doutreloigne, J. ; Bolognesi, D.

Author_Institution

ELIS-TFCG/IMEC University of Gent, Belgium

fYear

2002

fDate

24-26 September 2002

Firstpage

291

Lastpage

294

Keywords

Automotive applications; Batteries; CMOS technology; Costs; Design methodology; Doping; Electric breakdown; Implants; MOSFETs; Microelectronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

DOI

10.1109/ESSDERC.2002.194926

Filename

1503856

Link To Document