Title :
Vertical High Voltage Devices on Thick SOI with Back-end Trench Formation
Author :
Heinle, Ulrich ; Pinardi, Kuntjoro ; Olsson, Jörgen
Author_Institution :
Uppsala University, Sweden
fDate :
24-26 September 2002
Keywords :
Boron; Doping profiles; Electric variables; Etching; Filling; Laboratories; MOS devices; Solid state circuits; Temperature; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194927
