Title :
Tunnelling and Impact Ionization in Scaled Double Doped PHEMTs
Author :
Kalna, K. ; Asenov, A.
Author_Institution :
University of Glasgow, United Kingdom
fDate :
24-26 September 2002
Keywords :
Charge carrier density; Doping; Electric breakdown; Electron mobility; HEMTs; Impact ionization; MODFETs; PHEMTs; Transconductance; Tunneling;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194929
