Title :
Silicon carbide MESFETs performances and application in broadcast power amplifiers
Author :
Temcamani, F. ; Pouvil, P. ; Noblanc, O. ; Brylinski, C. ; Bannelier, P. ; Darges, B. ; Prigent, J.P.
Author_Institution :
ENSEA-EMO, Cergy-Pontoise, France
Abstract :
We present DC, small signal and power characterization of recent Thomson silicon carbide MESFETs. We present also performances of SiC power amplifiers designed for use in broadcast digital television. A comparison with a LDMOS amplifier showed that SiC is a very promising material for microwave and RF power amplification.
Keywords :
MESFET circuits; UHF circuits; UHF field effect transistors; UHF power amplifiers; digital television; power MESFET; silicon compounds; television equipment; wide band gap semiconductors; wideband amplifiers; 470 to 860 MHz; DC characterization; MESFET performance; RF power amplification; S parameters; SiC; UHF wideband amplifiers; breakdown voltage; broadcast digital television; broadcast power amplifiers; drain efficiency; load-pull characterization; microstrip circuit; microwave power amplification; power characterization; small signal characterization; Breakdown voltage; Conducting materials; MESFETs; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon carbide; TV broadcasting; Thermal conductivity;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966976
