Title :
Bulk vs. thin film PLZT ferroelectrics
Author :
Dausch, D.E. ; Haertling, G.H.
Author_Institution :
Dept. of Ceramic Eng., Clemson Univ., SC, USA
fDate :
30 Aug-2 Sep 1992
Abstract :
Lead lanthanum zirconate titanate (PLZT) ferroelectrics were produced in bulk ceramic and thin-film form in order to compare their electrical and physical properties. Both bulk and thin film samples of selected compositions were produced from the same acetate precursor solutions. Properties examined were permittivity, dissipation factor, remanent polarization, coercive field, Curie temperature, and crystallinity. Bulk ceramics were hot-pressed from chemically coprecipitated powders, and chemically derived thin films were fabricated by spin coating. Typical conditions for hot pressing were 1200°C for 4 h at 14 MPa (2000 psi), whereas the thin film were sintered at 700°C for 4 min per layer. The similarities and differences between the materials are described
Keywords :
ceramics; coating techniques; dielectric polarisation; ferroelectric Curie temperature; ferroelectric materials; ferroelectric thin films; hot pressing; lanthanum compounds; lead compounds; permittivity; sintering; 1200 degC; 14 MPa; 700 degC; Curie temperature; PLZT; PbLaZrO3TiO3; acetate precursor solutions; bulk ceramic; coercive field; coprecipitated powders; crystallinity; dissipation factor; electrical properties; hot pressing; permittivity; physical properties; remanent polarization; spin coating; thin film PLZT ferroelectrics; zirconate titanate; Ceramics; Chemicals; Crystallization; Ferroelectric materials; Lanthanum; Permittivity; Polarization; Temperature; Titanium compounds; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
DOI :
10.1109/ISAF.1992.300691
