• DocumentCode
    1922382
  • Title

    Highly oriented (Pb,La)(Zr,Ti)O3 thin films on amorphous substrates

  • Author

    Wu, A.Y. ; Hwang, D.M. ; Wang, L.M.

  • Author_Institution
    New Mexico Univ., Albuquerque, NM, USA
  • fYear
    1992
  • fDate
    30 Aug-2 Sep 1992
  • Firstpage
    301
  • Lastpage
    304
  • Abstract
    PLZT (lead lanthanum zirconate titanate) thin films have been deposited on various substrates, particularly on amorphous SiO2 , and on Si or GaAs with a buffer layer such as SiO2. Regardless of whether the substrate is single crystal or not, many films are highly oriented with one of the [100], [110], or [111] directions normal to the substrate surfaces. Depending on the PLZT composition, substrate material, and deposition conditions, there are ten different film categories. Among these films the most interesting ones are the highly oriented films deposited on amorphous SiO2 substrate because of the possibility of monolithic integration of integrated-optical thin film devices on Si and GaAs with a nonlattice matched buffer layer of SiO2, the best optical transparent material for waveguiding and integrated optics. The crystal structure, grain size, morphology, composition, and symmetry of the thin film on SiO2 have been studied
  • Keywords
    crystal atomic structure of inorganic compounds; crystal morphology; crystal orientation; ferroelectric materials; ferroelectric thin films; grain size; lanthanum compounds; lead compounds; stoichiometry; GaAs; PLZT; PbLaZrO3TiO3; Si; amorphous SiO2; amorphous substrates; buffer layer; composition; crystal structure; grain size; highly oriented films; monolithic integration; morphology; optical transparent material; oriented (Pb,La)(Zr,Ti)O3 thin films; symmetry; Amorphous materials; Buffer layers; Crystalline materials; Gallium arsenide; Grain size; Integrated optics; Lead; Optical films; Semiconductor films; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
  • Conference_Location
    Greenville, SC
  • Print_ISBN
    0-7803-0465-9
  • Type

    conf

  • DOI
    10.1109/ISAF.1992.300692
  • Filename
    300692