Title :
Highly oriented (Pb,La)(Zr,Ti)O3 thin films on amorphous substrates
Author :
Wu, A.Y. ; Hwang, D.M. ; Wang, L.M.
Author_Institution :
New Mexico Univ., Albuquerque, NM, USA
fDate :
30 Aug-2 Sep 1992
Abstract :
PLZT (lead lanthanum zirconate titanate) thin films have been deposited on various substrates, particularly on amorphous SiO2 , and on Si or GaAs with a buffer layer such as SiO2. Regardless of whether the substrate is single crystal or not, many films are highly oriented with one of the [100], [110], or [111] directions normal to the substrate surfaces. Depending on the PLZT composition, substrate material, and deposition conditions, there are ten different film categories. Among these films the most interesting ones are the highly oriented films deposited on amorphous SiO2 substrate because of the possibility of monolithic integration of integrated-optical thin film devices on Si and GaAs with a nonlattice matched buffer layer of SiO2, the best optical transparent material for waveguiding and integrated optics. The crystal structure, grain size, morphology, composition, and symmetry of the thin film on SiO2 have been studied
Keywords :
crystal atomic structure of inorganic compounds; crystal morphology; crystal orientation; ferroelectric materials; ferroelectric thin films; grain size; lanthanum compounds; lead compounds; stoichiometry; GaAs; PLZT; PbLaZrO3TiO3; Si; amorphous SiO2; amorphous substrates; buffer layer; composition; crystal structure; grain size; highly oriented films; monolithic integration; morphology; optical transparent material; oriented (Pb,La)(Zr,Ti)O3 thin films; symmetry; Amorphous materials; Buffer layers; Crystalline materials; Gallium arsenide; Grain size; Integrated optics; Lead; Optical films; Semiconductor films; Substrates;
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
DOI :
10.1109/ISAF.1992.300692
