Title :
Controlled ion bombardment induced modification of PZT thin films
Author :
Hu, H. ; Krapanidhi, S.B.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
fDate :
30 Aug-2 Sep 1992
Abstract :
The properties of PZT (lead zirconate titanate) thin films can be modified by low-energy oxygen ion bombardment. The degree of (100) orientation, remanent polarization (Pr), coercive field (E c), and dielectric constant (k) of the films were chosen to properly quantify the bombardment effect. It was found that these properties are strongly dependent on the ion beam flux and bombarding ion energy. Ion/atom ratios between 1.0 and 1.3 and bombarding energies of 60 to 80 eV are optimal for realizing the desirable property modification. Relative to the nonbombarding case, the bombardment could increase Pr and k by up to 60% and 25% respectively, and it could reduce Ec by about 20%. The improved properties also include crystallization temperature, switching characteristics, I-V behavior, and time-dependent dielectric breakdown
Keywords :
crystal orientation; dielectric polarisation; electric breakdown of solids; ferroelectric materials; ferroelectric switching; ferroelectric thin films; ion beam effects; lead compounds; permittivity; (100) orientation; I-V behavior; PZT; PZT thin films; PbZrO3TiO3; coercive field; crystallization temperature; dielectric constant; ion beam flux; ion bombardment induced modification; ion energy; low-energy oxygen ion bombardment; remanent polarization; switching characteristics; time-dependent dielectric breakdown; Crystallization; Dielectric thin films; Ferroelectric films; Ion beams; Ion sources; Plasma properties; Plasma temperature; Semiconductor films; Sputtering; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
DOI :
10.1109/ISAF.1992.300695
