Controlled ion bombardment induced modification of PZT thin films

The properties of PZT (lead zirconate titanate) thin films can be modified by low-energy oxygen ion bombardment. The degree of (100) orientation, remanent polarization (P_r), coercive field (E _c), and dielectric constant (k) of the films were chosen to properly quantify the bombardment effect. It was found that these properties are strongly dependent on the ion beam flux and bombarding ion energy. Ion/atom ratios between 1.0 and 1.3 and bombarding energies of 60 to 80 eV are optimal for realizing the desirable property modification. Relative to the nonbombarding case, the bombardment could increase P_r and k by up to 60% and 25% respectively, and it could reduce E_c by about 20%. The improved properties also include crystallization temperature, switching characteristics, I-V behavior, and time-dependent dielectric breakdown