DocumentCode :
1922447
Title :
Microwave assisted low temperature solid phase crystallization of ferroelectric thin films
Author :
Chen, Jiayu ; Udayakumar, K.R. ; Cross, L.E.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fYear :
1992
fDate :
30 Aug-2 Sep 1992
Firstpage :
313
Lastpage :
316
Abstract :
Sol-gel-derived ferroelectric thin films of PZT (lead zirconate titanate) and PLZT (lead lanthanum zirconate titanate) have been successfully processed using internal heating with microwave energy. Pyrolysis and crystallization of films in the microwave field were fast, and showed good selectivity. The nature of xerogel plays an important role in the pyrolysis and crystallization of these films because of good coupling of the microwaves with these dipole-containing species. The microwave-processed films exhibit respectable dielectric and ferroelectric properties
Keywords :
crystallisation; ferroelectric materials; ferroelectric thin films; lanthanum compounds; lead compounds; pyrolysis; rapid thermal processing; PLZT; PZT; PbLaZrO3TiO3; PbZrO3TiO3; dielectric properties; ferroelectric properties; ferroelectric thin films; internal heating; microwave assisted low temperature crystallisation; pyrolysis; selectivity; sol-gel derived films; xerogel; Crystallization; Dielectric films; Electromagnetic heating; Ferroelectric films; Ferroelectric materials; Lanthanum; Solids; Temperature; Titanium compounds; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
Type :
conf
DOI :
10.1109/ISAF.1992.300696
Filename :
300696
Link To Document :
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