• DocumentCode
    1922462
  • Title

    Nonlinear III-V HBT compact models: do we have what we need?

  • Author

    Scott, J.

  • Author_Institution
    Agilent Technol., Santa Rosa, CA, USA
  • Volume
    2
  • fYear
    2001
  • fDate
    20-24 May 2001
  • Firstpage
    663
  • Abstract
    Within the large body of literature on models for III-V HBTs it now seems possible to find compact formulations with extractable parameters that model all important device characteristics. Predictions are as accurate as possible given the limitation of quasi-static host simulators. Some recommended strategies for extraction of parameters for certain formulations are given. Despite accurate formulation, some aspects may be better left out of models in the interest of expediency, with no significant reduction of final performance. Transit time remains difficult, and limitations of simulators swamp discrepancies between measurement and predictions of even apparently-precise models. It is concluded that compact models, if not simulators, are as physically precise as we should bother to make them.
  • Keywords
    III-V semiconductors; SPICE; heterojunction bipolar transistors; semiconductor device models; DC model; Gummel plot; III-V HBT; SPICE; charge storage model; extractable parameters; nonlinear compact models; parameter extraction strategies; simulator limitations; transit time; Current density; Current measurement; Equations; Heterojunction bipolar transistors; III-V semiconductor materials; Integrated circuit modeling; Temperature; Thermal factors; Thermal force; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2001 IEEE MTT-S International
  • Conference_Location
    Phoenix, AZ, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-6538-0
  • Type

    conf

  • DOI
    10.1109/MWSYM.2001.966981
  • Filename
    966981