DocumentCode
1922462
Title
Nonlinear III-V HBT compact models: do we have what we need?
Author
Scott, J.
Author_Institution
Agilent Technol., Santa Rosa, CA, USA
Volume
2
fYear
2001
fDate
20-24 May 2001
Firstpage
663
Abstract
Within the large body of literature on models for III-V HBTs it now seems possible to find compact formulations with extractable parameters that model all important device characteristics. Predictions are as accurate as possible given the limitation of quasi-static host simulators. Some recommended strategies for extraction of parameters for certain formulations are given. Despite accurate formulation, some aspects may be better left out of models in the interest of expediency, with no significant reduction of final performance. Transit time remains difficult, and limitations of simulators swamp discrepancies between measurement and predictions of even apparently-precise models. It is concluded that compact models, if not simulators, are as physically precise as we should bother to make them.
Keywords
III-V semiconductors; SPICE; heterojunction bipolar transistors; semiconductor device models; DC model; Gummel plot; III-V HBT; SPICE; charge storage model; extractable parameters; nonlinear compact models; parameter extraction strategies; simulator limitations; transit time; Current density; Current measurement; Equations; Heterojunction bipolar transistors; III-V semiconductor materials; Integrated circuit modeling; Temperature; Thermal factors; Thermal force; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.966981
Filename
966981
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