Hot-Carrier Reliability in n-MOSFET´s Used as Pass-Transistors

AC-stressing is investigated to determine the hot-carrier degradations in 0.5, ¿m CMOS technology and is interpreted by a quasi-static model based on district damage mechanisms. The hot-carrier dependence of n-MOSFET´s operating in Pass-Transistor configurations is carefully studied as a function of the propagation time and geometry. It is shown that the device degradation may exhibit in some cases a strong dependence with the propagation time and clearly differs from the simple case of inverter operation.