Improved large-signal model and model extraction procedure for InGaP/GaAs HBTs under high-current operations

Author

Cherepko, S.V. ; Shirokov, M.S. ; Hwang, J.C.M. ; Brandstaedter, A.

Author_Institution

Lehigh Univ., Bethlehem, PA, USA

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

671

Abstract

Improved large-signal as well as improved model extraction procedure is proposed for InGaP/GaAs HBTs under high-current operations. The model comprises physics-based differential equations that are implemented through symbolically defined devices in a commercially available circuit simulator. Other model improvements include bilateral logical correlation with small-signal characteristics, and additional series resistance with the base-emitter diffusion capacitance. The improvement in extraction procedure is mainly based on a fixed intrinsic vs. extrinsic base-collector capacitance ratio at low currents, whereas a fixed intrinsic base resistance at high currents. Experimentally it has been verified that the as-extracted model without numerical optimization closely predicts the RF power performance of the HBTs.

Keywords

III-V semiconductors; S-parameters; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; DC model; Gummel plot; HBT; InGaP-GaAs; RF power performance; S parameters; additional series resistance; base-emitter diffusion capacitance; bilateral logical correlation; equivalent circuit; fixed intrinsic base resistance; high-current operation; improved large-signal model; model extraction procedure; physics-based differential equations; small-signal characteristics; symbolically defined devices; Capacitance; Electrical resistance measurement; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Identity-based encryption; Radio frequency; Semiconductor device modeling; Temperature dependence; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.966983

Filename

966983