Title :
Properties of Vacancies in Silicon Determined from Laser--Annealing Experiments
Author_Institution :
FhG/IIS-B, Erlangen, Germany
fDate :
24-26 September 2002
Keywords :
Annealing; Atomic beams; Atomic measurements; Equations; Ionization; Iron; Kinetic theory; Numerical simulation; Silicon; Temperature distribution;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194937
