Properties of Vacancies in Silicon Determined from Laser--Annealing Experiments

Author

Pichler, Peter

Author_Institution

FhG/IIS-B, Erlangen, Germany

fYear

2002

fDate

24-26 September 2002

Firstpage

335

Lastpage

338

Keywords

Annealing; Atomic beams; Atomic measurements; Equations; Ionization; Iron; Kinetic theory; Numerical simulation; Silicon; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

DOI

10.1109/ESSDERC.2002.194937

Filename

1503867

Link To Document