Title :
Current Gain - Early Voltage Products In Graded Base Si/Si/sub 1-x/Ge/sub x/Si Heterojunction Bipolar Transistors
Author :
Prinz, E.J. ; Sturm, J.C.
Author_Institution :
Dept. of Electrical Engineering, Princeton University
Keywords :
Bipolar transistors; Boron; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; Ice; Photonic band gap; Silicon germanium; Solid state circuits; Voltage;
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
DOI :
10.1109/DRC.1991.664678
