Waveform characterization and modeling of dynamic charge behavior of InGaP-GaAs HBTs

Author

Wei, C.-J. ; Sprinkle, S. ; Hu, J.T. ; Chung, H.-C. ; Mitchell, B. ; DiCarlo, P. ; Bartle, D.

Author_Institution

Alpha Ind. Inc., Woburn, MA, USA

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

675

Abstract

This study presents a novel time-domain characterization method for the first time, to reveal dynamic charge behavior of HBTs. The charge model plays an important role in power InGaP-GaAs HBT amplifiers designed with self-biasing. It is shown that charge-storage and extraction from the base of the HBT at a high-power drive cannot be described by the conventional quasi-static model. A new collector-base charge model is proposed to account for the time-response of the devices.

Keywords

III-V semiconductors; electric charge; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device measurement; semiconductor device models; time-domain analysis; 800 MHz to 15.2 GHz; HBT modeling; InGaP-GaAs; InGaP-GaAs HBTs; charge extraction; charge storage; collector-base charge model; device time-response; dynamic charge behavior; power HBT amplifiers; self-biasing amplifiers; time-domain characterization method; waveform characterization; Diodes; Heterojunction bipolar transistors; Power amplifiers; Predictive models; Radio frequency; Resistors; Scattering parameters; Time domain analysis; Time factors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.966984

Filename

966984