DocumentCode :
1922553
Title :
Effects of Random Discrete Impurities in Ultra-short MOSFET Using 3D Monte Carlo Simulation
Author :
Barraud, Sylvain ; Dollfus, Philippe ; Galdin, Sylvie ; Hesto, Patrice
Author_Institution :
IEF-CNRS, Universite Paris sud, Orsay, France
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
343
Lastpage :
346
Keywords :
Charge carrier processes; Computational modeling; Doping; Electrons; Fluctuations; Impurities; MOSFET circuits; Particle scattering; Poisson equations; Semiconductor process modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194939
Filename :
1503869
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1922553
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