DocumentCode
1922632
Title
The study of PZT ferroelectric thin film and composite with amorphous silicon
Author
Ling, Wang Yong ; Huai, Wu Dao ; Ting, Chen Hui ; Wei, Yu Da
Author_Institution
Shanghai Inst. of Ceramics, Chinese Acad. of Sci., China
fYear
1992
fDate
30 Aug-2 Sep 1992
Firstpage
353
Lastpage
355
Abstract
The remanant polarization and coercive field of PZT (lead zirconate titanate) ceramics have been investigated as a function of specimen thickness. The properties of PZT thin film prepared by RF sputtering were also studied. In addition, novel optical devices with composite amorphous silicon and PZT ceramics were designed
Keywords
amorphous semiconductors; ceramics; composite material interfaces; composite materials; dielectric hysteresis; dielectric polarisation; elemental semiconductors; ferroelectric thin films; lead compounds; silicon; sputtered coatings; PZT ferroelectric thin film; PZT-Si; PbZrO3TiO3; PbZrO3TiO3-Si; RF sputtering; ceramics; coercive field; ferroelectric hysteresis loop; optical devices; remanant polarization; specimen thickness; Amorphous silicon; Ceramics; Ferroelectric materials; Optical design; Optical devices; Optical polarization; Radio frequency; Sputtering; Titanium compounds; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location
Greenville, SC
Print_ISBN
0-7803-0465-9
Type
conf
DOI
10.1109/ISAF.1992.300706
Filename
300706
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