Microstructure-induced Schottky barrier effects in barium strontium titanate (BST) thin films for 16 and 64 Mbit (DRAM cells)

Author

Scott, J.F. ; Azuma, M. ; Fujii, E. ; Otsuki, T. ; Kano, C. ; Scott, M.C. ; Paz de Araujo, C.A. ; McMillan, L.D. ; Roberts, T.

Author_Institution

Symetrix Corp., Colorado Springs, CO, USA

fYear

1992

fDate

30 Aug-2 Sep 1992

Firstpage

356

Lastpage

359

Abstract

The current-voltage and capacitance-voltage characteristics of fine-grained, ceramic BST thin films for ULSI (ultralarge-scale integrated) DRAM (dynamic random-access memory) applications are examined. A model and pertinent data for integrated BST capacitors used in 16/64-Mb DRAM cells are presented. The results confirm in detail the conclusion of R. Waser and M. Klee (1991, 1992) that conduction in ceramic SrTiO₃ is Schottky-dominated and that the Schottky barriers arise from depletion regions at grain boundaries and not only at the ferroelectric/electrode interface

Keywords

DRAM chips; Schottky effect; barium compounds; capacitance; ceramics; electronic conduction in insulating thin films; ferroelectric storage; ferroelectric thin films; grain boundaries; strontium compounds; thin film capacitors; 16 Mbit; 64 Mbit; BaSrTiO₃ thin films; I-V characteristics; Schottky barrier effects; Schottky dominated conduction; ULSI DRAM; capacitance-voltage characteristics; depletion regions; ferroelectric/electrode interface; grain boundaries; integrated capacitors; model; Barium; Binary search trees; Capacitance-voltage characteristics; Capacitors; Ceramics; Random access memory; Schottky barriers; Strontium; Transistors; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on

Conference_Location

Greenville, SC

Print_ISBN

0-7803-0465-9

Type

conf

DOI

10.1109/ISAF.1992.300707

Filename

300707