DocumentCode :
1922682
Title :
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories
Author :
Chimenton, Andrea ; Olivo, Piero
Author_Institution :
University of Ferrara, Italy
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
363
Lastpage :
366
Keywords :
Automatic testing; Flash memory; Instruments; Nonvolatile memory; Performance evaluation; Semiconductor device measurement; Statistical analysis; Test equipment; Threshold voltage; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194944
Filename :
1503874
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1922682
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