Title :
6.7 GHz frequency synthesizer in 0.8 /spl mu/m silicon bipolar production technology
Author :
Ritzberger, G. ; Knapp, H. ; Bock, J. ; Rest, M. ; Treitinger, L. ; Scholtz, A.L.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
This paper presents a 6.7 GHz phase-locked loop frequency synthesizer in a low-cost 0.8 /spl mu/m/25 GHz-f/sub T/ silicon bipolar production technology. The total power consumption of 82 mW at 3 V includes the power consumption of the voltage-controlled oscillator, the phase-frequency detector, the charge pump, the loop filter, and the divider. The synthesizer offers a phase noise performance of -103 dBc/Hz at 1 MHz offset from the carrier. 6.7 GHz is the highest operating frequency for silicon-based synthesizers published.
Keywords :
bipolar MMIC; frequency synthesizers; integrated circuit noise; mixed analogue-digital integrated circuits; phase locked loops; phase noise; silicon; 0.8 micron; 25 GHz; 3 V; 6.7 GHz; 82 mW; PLL frequency synthesizer; Si; Si bipolar production technology; VCO; charge pump; divider; loop filter; phase noise performance; phase-frequency detector; phase-locked loop frequency synthesizer; voltage-controlled oscillator; Charge pumps; Energy consumption; Filters; Frequency synthesizers; Phase detection; Phase frequency detector; Phase locked loops; Production; Silicon; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966990
