Title :
Design Guidelines for Linear Amplification and Low-insertion Loss in 5-GHz-band SOI Power MOSFETs
Author :
Matsumoto, Satoshi ; Hiraoka, Yasushi ; Mino, Masato
Author_Institution :
NTT Telecommunications Energy Laboratories, Atsugi, Japan
fDate :
24-26 September 2002
Keywords :
Circuits; Fabrication; Guidelines; Inductors; Laboratories; MMICs; MOSFETs; Radio frequency; Radiofrequency amplifiers; Substrates;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194946
