Exciton/free carrier plasma in wide-gap semiconductors

Author

Portnoi, M.E. ; Galbraith, I.

Author_Institution

Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK

fYear

1998

fDate

8-8 May 1998

Firstpage

58

Abstract

Summary form only given. The variable-phase approach is applied to scattering and bound states in screened Coulomb potentials in three and two dimensions. A proper account of scattering eliminates discontinuities in thermodynamic properties of the electron-hole system whenever bound states disappear due to screening. This consistent treatment of bound states and scattering allows us to estimate the distribution of electron-hole pairs between correlated and free-carrier states.

Keywords

II-VI semiconductors; electron-electron scattering; excitons; semiconductor plasma; semiconductor quantum wells; wide band gap semiconductors; ZnSe; bound states; discontinuities; electron-hole pair distribution; electron-hole pairs; electron-hole system; excitons; free carrier plasma; free-carrier states; scattering states; screened Coulomb potentials; thermodynamic properties; variable-phase approach; wide-gap semiconductors; Charge carrier density; Excitons; Gallium arsenide; Optical scattering; Particle scattering; Plasma properties; Plasma temperature; Quantum dots; Quantum mechanics; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-541-2

Type

conf

DOI

10.1109/IQEC.1998.680122

Filename

680122