DocumentCode :
1922861
Title :
Accurate Modeling of Quantum-Dot Based Multi Tunnel Junction Memory: Optimization and Process Dispersions Analyzes for DRAM Applications
Author :
Royer, Cyrille Le ; Carval, Gilles Le ; Fraboulet, David ; Sanquer, Marc
Author_Institution :
CEA-LETI, Grenoble, France
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
403
Lastpage :
406
Keywords :
Character generation; Dispersion; Electrons; MOSFET circuits; Magnetic tunneling; Nonvolatile memory; Performance analysis; Quantum dots; Random access memory; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194953
Filename :
1503883
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1922861
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