Title :
Amorphization of bulk and thin film PLZT materials by 1.5 MeV krypton ion irradiation with in situ TEM observation
Author :
Wang, L.M. ; Wu, A.Y.
Author_Institution :
New Mexico Univ., Albuquerque, NM
fDate :
30 Aug-2 Sep 1992
Abstract :
Transmission electron microscopy (TEM) samples prepared from both bulk and thin-film PLZT (lanthanum-modified lead zirconate titanate) materials have been irradiated with 1.5-MeV krypton ions at various temperatures. At room temperature, a PLZT 9/65/35 ceramic samples was found to be come completely amorphized after a dose of 2~×1014 ions/cm2, much less than the critical amorphization dose for silicon. The sputter-deposited, fine-grained PLZT thin film took even a smaller dose to become amorphous. However, at 450°C, the upper temperature limit for the material to retain its desirable physical properties, the PLZT 9/65/35 was not amorphized even after a dose of 1.1×1015 ions/cm2. PLZT is sensitive to ion-irradiation-induced amorphization because of its high nuclear stopping power and complex crystal structure
Keywords :
amorphisation; ceramics; ferroelectric materials; ferroelectric thin films; ion beam effects; lanthanum compounds; lead compounds; sputtered coatings; transmission electron microscope examination of materials; 1.5 MeV; Kr+ ion irradiation; PLZT thin film; PbLaZrO3TiO3; ceramic; crystal structure; ferroelectric thin film; in situ TEM; ion-irradiation-induced amorphization; nuclear stopping power; sputter deposition; Amorphous materials; Crystalline materials; Ferroelectric materials; Ion beams; Optical devices; Optical films; Optical materials; Optical sensors; Temperature; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
DOI :
10.1109/ISAF.1992.300718