Title :
Characteristics of HfO2 pMOSFET with Ultrashallow Junction Prepared by Plasma Doping and Laser Annealing
Author :
Baek, Sungkweon ; Heo, Sungho ; Hwang, Hyunsang
Author_Institution :
Kwangju Institute of Science and Technology, Korea (South)
fDate :
24-26 September 2002
Keywords :
Annealing; Doping; Hafnium oxide; MOSFET circuits; Plasma properties;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194958
