Modeling of a 1200 V 6 a SiC bipolar junction transistor

A SiC BJT model including quasi-saturation effects is proposed in this paper. The model limits the number of parameters required for the Gummel-Poon model and the model parameters have been extracted from experimental plots. The modeling results are then implemented in a circuit simulator such as Saber to build a SiC BJT model. Validity of the model is confirmed by comparing the model with experimental static and dynamic characteristics. The model is capable of accurately reproducing device dynamic switching behavior at various voltage levels and temperatures.