DocumentCode
1923071
Title
Modeling of a 1200 V 6 a SiC bipolar junction transistor
Author
Yizhe Huang ; Shidong Cheng ; Weicheng Zhou ; Kuang Sheng
Author_Institution
Coll. of Electr. Eng., Zhejiang Univ., Hangzhou, China
fYear
2013
fDate
15-19 Sept. 2013
Firstpage
934
Lastpage
939
Abstract
A SiC BJT model including quasi-saturation effects is proposed in this paper. The model limits the number of parameters required for the Gummel-Poon model and the model parameters have been extracted from experimental plots. The modeling results are then implemented in a circuit simulator such as Saber to build a SiC BJT model. Validity of the model is confirmed by comparing the model with experimental static and dynamic characteristics. The model is capable of accurately reproducing device dynamic switching behavior at various voltage levels and temperatures.
Keywords
bipolar transistors; circuit simulation; semiconductor device models; silicon compounds; wide band gap semiconductors; Gummel-Poon model; Saber; SiC; SiC BJT model; SiC bipolar junction transistor model; circuit simulator; current 6 A; dynamic switching; quasisaturation effects; voltage 1200 V; Capacitance; Integrated circuit modeling; Junctions; Silicon carbide; Switches; Temperature; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2013 IEEE
Conference_Location
Denver, CO
Type
conf
DOI
10.1109/ECCE.2013.6646803
Filename
6646803
Link To Document