Title :
Dielectric properties of oxidized porous silicon in a low resistivity substrate
Author :
Peterson, R.L. ; Drayton, R.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA
Abstract :
Oxidized porous silicon (OPS) is characterized for its high frequency electrical properties up to 50 GHz. Transmission line properties are determined from measurement data and are compared with high and low resistivity silicon benchmark designs. Best OPS performance of 50 Ohm lines is observed on oxide-capped OPS, having attenuation of approximately 2.93 dB/cm at 4 GHz with an effective dielectric constant of 3.25. This technology offers promise for extending the use of CMOS circuitry to higher RF frequencies.
Keywords :
CMOS integrated circuits; elemental semiconductors; field effect MMIC; oxidation; permittivity; porous semiconductors; silicon; 4 GHz; 50 ohm; CMOS circuitry; Si; benchmark designs; effective dielectric constant; high frequency electrical properties; low resistivity substrate; oxide-capped OPS; oxidized porous silicon; transmission line properties; Attenuation; CMOS technology; Circuits; Conductivity; Dielectric constant; Dielectric losses; Dielectric substrates; Frequency; Silicon; Transmission line measurements;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967005
