Dielectric properties of oxidized porous silicon in a low resistivity substrate

Author

Peterson, R.L. ; Drayton, R.F.

Author_Institution

Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

767

Abstract

Oxidized porous silicon (OPS) is characterized for its high frequency electrical properties up to 50 GHz. Transmission line properties are determined from measurement data and are compared with high and low resistivity silicon benchmark designs. Best OPS performance of 50 Ohm lines is observed on oxide-capped OPS, having attenuation of approximately 2.93 dB/cm at 4 GHz with an effective dielectric constant of 3.25. This technology offers promise for extending the use of CMOS circuitry to higher RF frequencies.

Keywords

CMOS integrated circuits; elemental semiconductors; field effect MMIC; oxidation; permittivity; porous semiconductors; silicon; 4 GHz; 50 ohm; CMOS circuitry; Si; benchmark designs; effective dielectric constant; high frequency electrical properties; low resistivity substrate; oxide-capped OPS; oxidized porous silicon; transmission line properties; Attenuation; CMOS technology; Circuits; Conductivity; Dielectric constant; Dielectric losses; Dielectric substrates; Frequency; Silicon; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967005

Filename

967005