Title :
UIS-Failure of DMOS Power Transistors
Author :
Deckelmann, A. Icaza ; Wachutka, G. ; Hirler, F. ; Krumrey, J.
Author_Institution :
Institute for Physics of Electrotechnology, Munich, Germany
fDate :
24-26 September 2002
Keywords :
Charge carrier density; Current distribution; Electrons; Failure analysis; Numerical analysis; Power transistors; Proximity effect; Semiconductor optical amplifiers; Temperature distribution; Thermal stresses;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194967
